Zilog Single FETs, MOSFETs IXFP110N15T2

Description
N-Channel 150V 110A (Tc) 480W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 150V 110A (Tc) 480W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXFP110N15T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP110N15T2-ND
Single FETs, MOSFETs IXFP110N15T2-ND
N-Channel 150V 110A (Tc) 480W (Tc) Through Hole TO-220-3

N-Channel 150V 110A (Tc) 480W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP110N15T2 - 1049500-IXFP110N15T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP110N15T2
1049500-IXFP110N15T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP110N15T2 1049500-IXFP110N15T2
Manufacturer: IXYS Win Source Part Number: 1049500-IXFP110N15T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 8600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13 mOhm @ 55A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1049500-IXFP110N15T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 480W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 8600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 55A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP110N15T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP110N15T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP110N15T2
MOSFET N-CH 150V 110A TO220AB

MOSFET N-CH 150V 110A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Trench T2 HiperFET Power MOSFET

MOSFET Trench T2 HiperFET Power MOSFET

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Single FETs, MOSFETs - IXFP110N15T2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFP110N15T2
Single FETs, MOSFETs IXFP110N15T2
MOSFET N-CH 150V 110A TO220AB

MOSFET N-CH 150V 110A TO220AB

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFP110N15T2-ND 1049500-IXFP110N15T2 IXFP110N15T2 IXFP110N15T2 IXFP110N15T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP110N15T2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3
V(BR)DSS 150 volts 150 volts
PD 480000 milliwatts 480000 milliwatts
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