Littelfuse, Inc. Single FETs, MOSFETs IXFP10N80P

Description
N-Channel 800V 10A (Tc) 300W (Tc) Through Hole TO-220-3
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Description
N-Channel 800V 10A (Tc) 300W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

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Single FETs, MOSFETs - IXFP10N80P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP10N80P-ND
Single FETs, MOSFETs IXFP10N80P-ND
N-Channel 800V 10A (Tc) 300W (Tc) Through Hole TO-220-3

N-Channel 800V 10A (Tc) 300W (Tc) Through Hole TO-220-3

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323974-IXFP10N80P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323974-IXFP10N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323974-IXFP10N80P
Manufacturer: IXYS Win Source Part Number: 1323974-IXFP10N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFP10 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1323974-IXFP10N80P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFP10
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

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Sheung Wan, Hong Kong
MOSFET 10 Amps 800V 1.1 Rds

MOSFET 10 Amps 800V 1.1 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP10N80P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP10N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP10N80P
MOSFET N-CH 800V 10A TO220AB

MOSFET N-CH 800V 10A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFP10N80P-ND 1323974-IXFP10N80P IXFP10N80P IXFP10N80P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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