Littelfuse, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFP10N80P

Description
Manufacturer: IXYS Win Source Part Number: 1323974-IXFP10N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFP10 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1323974-IXFP10N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFP10 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323974-IXFP10N80P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323974-IXFP10N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323974-IXFP10N80P
Manufacturer: IXYS Win Source Part Number: 1323974-IXFP10N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Power Dissipation (Max): 300W (Tc) Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFP10 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1323974-IXFP10N80P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Power Dissipation (Max): 300W (Tc)
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFP10
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXFP10N80P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP10N80P-ND
Single FETs, MOSFETs IXFP10N80P-ND
N-Channel 800V 10A (Tc) 300W (Tc) Through Hole TO-220-3

N-Channel 800V 10A (Tc) 300W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP10N80P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP10N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP10N80P
MOSFET N-CH 800V 10A TO220AB

MOSFET N-CH 800V 10A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 10 Amps 800V 1.1 Rds

MOSFET 10 Amps 800V 1.1 Rds

Buy Now

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1323974-IXFP10N80P IXFP10N80P-ND IXFP10N80P IXFP10N80P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor - TGF2819-FS - Qorvo
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
GaAs Fet Switches - KS209 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 3000 MHz
View Details