Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFN82N60Q3

Description
Manufacturer: IXYS Win Source Part Number: 1324585-IXFN82N60Q3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Power Dissipation (Max): 960W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN82 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: IXYS Win Source Part Number: 1324585-IXFN82N60Q3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Power Dissipation (Max): 960W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN82 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324585-IXFN82N60Q3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324585-IXFN82N60Q3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324585-IXFN82N60Q3
Manufacturer: IXYS Win Source Part Number: 1324585-IXFN82N60Q3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Power Dissipation (Max): 960W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN82 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324585-IXFN82N60Q3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 960W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN82
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXFN82N60Q3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN82N60Q3-ND
Single FETs, MOSFETs IXFN82N60Q3-ND
N-Channel 600V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B

N-Channel 600V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A

MOSFET Q3Class HiPerFET Pwr MOSFET 600V/66A

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN82N60Q3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN82N60Q3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN82N60Q3
MOSFET N-CH 600V 66A SOT227B

MOSFET N-CH 600V 66A SOT227B

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1324585-IXFN82N60Q3 IXFN82N60Q3-ND IXFN82N60Q3 IXFN82N60Q3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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