MOSFET N-CH 600V 72A SOT-227B
Manufacturer: IXYS
Win Source Part Number: 1003992-IXFN82N60P
Packaging: Tube/Rail
Mounting: Chassis Mount
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1040W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-227B
Dimension: SOT-227-4, miniBLOC
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 72A
Gate-Source Threshold Voltage: 5V @ 8mA
Max Gate Charge: 240nC @ 10V
Max Input Capacitance: 23000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 75 mOhm @ 41A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
N-Channel 600V 72A (Tc) 1040W (Tc) Chassis Mount SOT-227B
MOSFET N-CH 600V 72A SOT-227B
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN82N60P | 1003992-IXFN82N60P | 238-IXFN82N60P-ND | IXFN82N60P | IXFN82N60P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN82N60P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 600 volts | 600 volts | |||
| IDSS | 72000 milliamps |
