Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFN70N100X

Description
Manufacturer: IXYS Win Source Part Number: 1323972-IXFN70N100X Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 6V @ 8mA Power Dissipation (Max): 1200W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 72 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN70 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1323972-IXFN70N100X Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 6V @ 8mA Power Dissipation (Max): 1200W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 72 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN70 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323972-IXFN70N100X - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323972-IXFN70N100X
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323972-IXFN70N100X
Manufacturer: IXYS Win Source Part Number: 1323972-IXFN70N100X Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 6V @ 8mA Power Dissipation (Max): 1200W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 72 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN70 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1323972-IXFN70N100X
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 6V @ 8mA
Power Dissipation (Max): 1200W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9150 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 72
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN70
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXFN70N100X-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN70N100X-ND
Single FETs, MOSFETs IXFN70N100X-ND
N-Channel 1000V 56A (Tc) 1200W (Tc) Chassis Mount SOT-227B

N-Channel 1000V 56A (Tc) 1200W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN70N100X - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN70N100X
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN70N100X
MOSFET N-CH 1000V 56A SOT227B

MOSFET N-CH 1000V 56A SOT227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 1000V 65A SOT-227 Power MOSFET

MOSFET 1000V 65A SOT-227 Power MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1323972-IXFN70N100X IXFN70N100X-ND IXFN70N100X IXFN70N100X
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data