Littelfuse, Inc. Single FETs, MOSFETs IXFN64N50P

Description
MOSFET N-CH 500V 61A SOT227B
Request a Quote Datasheet
Description
MOSFET N-CH 500V 61A SOT227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFN64N50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN64N50P
Single FETs, MOSFETs IXFN64N50P
MOSFET N-CH 500V 61A SOT227B

MOSFET N-CH 500V 61A SOT227B

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXFN64N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFN64N50P-ND
Single FETs, MOSFETs 238-IXFN64N50P-ND
N-Channel 500V 61A (Tc) 700W (Tc) Chassis Mount SOT-227B

N-Channel 500V 61A (Tc) 700W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325261-IXFN64N50P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325261-IXFN64N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325261-IXFN64N50P
Manufacturer: IXYS Win Source Part Number: 1325261-IXFN64N50P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Power Dissipation (Max): 700W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 85 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN64 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1325261-IXFN64N50P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 700W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN64
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN64N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN64N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN64N50P
MOSFET N-CH 500V 61A SOT227B

MOSFET N-CH 500V 61A SOT227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 64A

MOSFET 500V 64A

Buy Now

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN64N50P 238-IXFN64N50P-ND 1325261-IXFN64N50P IXFN64N50P IXFN64N50P
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts
IDSS 61000 milliamps
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