Littelfuse, Inc. Single FETs, MOSFETs IXFN48N60P

Description
N-Channel 600V 40A (Tc) 625W (Tc) Chassis Mount SOT-227B
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Description
N-Channel 600V 40A (Tc) 625W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

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Single FETs, MOSFETs - IXFN48N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN48N60P-ND
Single FETs, MOSFETs IXFN48N60P-ND
N-Channel 600V 40A (Tc) 625W (Tc) Chassis Mount SOT-227B

N-Channel 600V 40A (Tc) 625W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN48N60P - 766430-IXFN48N60P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN48N60P
766430-IXFN48N60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN48N60P 766430-IXFN48N60P
Manufacturer: IXYS Win Source Part Number: 766430-IXFN48N60P Series: PolarHV Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 40A Family Name: IXFN48N60P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: SOT-227B Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8860pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 625W (Tc) Rds On (Maximum) @ Id, Vgs: 140 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): APT6017JLL; APT6015JVR; APT6015JVFR; Introduction Date: May 12, 2006 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2026 Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 766430-IXFN48N60P
Series: PolarHV
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 40A
Family Name: IXFN48N60P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: SOT-227B
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8860pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 625W (Tc)
Rds On (Maximum) @ Id, Vgs: 140 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): APT6017JLL; APT6015JVR; APT6015JVFR;
Introduction Date: May 12, 2006
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2026
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 600V 48A

MOSFET 600V 48A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN48N60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN48N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN48N60P
MOSFET N-CH 600V 40A SOT227B

MOSFET N-CH 600V 40A SOT227B

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFN48N60P-ND 766430-IXFN48N60P IXFN48N60P IXFN48N60P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN48N60P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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