Littelfuse, Inc. Single FETs, MOSFETs IXFN48N50

Description
MOSFET N-CH 500V 48A SOT-227B
Request a Quote Datasheet
Description
MOSFET N-CH 500V 48A SOT-227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFN48N50 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN48N50
Single FETs, MOSFETs IXFN48N50
MOSFET N-CH 500V 48A SOT-227B

MOSFET N-CH 500V 48A SOT-227B

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFN48N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN48N50-ND
Single FETs, MOSFETs IXFN48N50-ND
N-Channel 500V 48A (Tc) 520W (Tc) Chassis Mount SOT-227B

N-Channel 500V 48A (Tc) 520W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN48N50 - 018139-IXFN48N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN48N50
018139-IXFN48N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN48N50 018139-IXFN48N50
Manufacturer: IXYS Win Source Part Number: 018139-IXFN48N50 Packaging: Tube/Rail Mounting: Chassis Mount Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 520W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-227B Dimension: SOT-227-4, miniBLOC Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 48A Gate-Source Threshold Voltage: 4V @ 8mA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 8400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 500mA, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 018139-IXFN48N50
Packaging: Tube/Rail
Mounting: Chassis Mount
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 520W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-227B
Dimension: SOT-227-4, miniBLOC
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 48A
Gate-Source Threshold Voltage: 4V @ 8mA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 8400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 500mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 500V 48A

MOSFET 500V 48A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN48N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN48N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN48N50
MOSFET N-CH 500V 48A SOT-227B

MOSFET N-CH 500V 48A SOT-227B

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFN48N50 IXFN48N50-ND 018139-IXFN48N50 IXFN48N50 IXFN48N50
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN48N50 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 48000 milliamps
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