MOSFET N-CH 1000V 38A SOT-227 Product overview: IXFN38N100Q2 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN38N100Q2 can be used for catalog matching and distributor lookup.
N-Channel 1000V 38A (Tc) 890W (Tc) Chassis Mount SOT-227B
MOSFET N-CH 1000V 38A SOT-227
Win Source Part Number: 1225319-IXFN38N100Q2
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Q2 Class
Package: Tube
Standard Package: 10
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 890W (Tc)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 1000V 38A SOT-227
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IXFN38N100Q2 | IXFN38N100Q2-ND | IXFN38N100Q2 | 1225319-IXFN38N100Q2 | IXFN38N100Q2 |
| Product Name | 1000V 38A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |
| PD | 890 milliwatts | 890000 milliwatts | 890000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT3 | SOT-227-4, miniBLOC |