Littelfuse, Inc. Single FETs, MOSFETs IXFN360N15T2

Description
MOSFET N-CH 150V 310A SOT227B
Request a Quote Datasheet
Description
MOSFET N-CH 150V 310A SOT227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFN360N15T2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN360N15T2
Single FETs, MOSFETs IXFN360N15T2
MOSFET N-CH 150V 310A SOT227B

MOSFET N-CH 150V 310A SOT227B

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324572-IXFN360N15T2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324572-IXFN360N15T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324572-IXFN360N15T2
Manufacturer: IXYS Win Source Part Number: 1324572-IXFN360N15T2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 310A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 1070W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN360 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324572-IXFN360N15T2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 1070W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN360
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXFN360N15T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN360N15T2-ND
Single FETs, MOSFETs IXFN360N15T2-ND
N-Channel 150V 310A (Tc) 1070W (Tc) Chassis Mount SOT-227B

N-Channel 150V 310A (Tc) 1070W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN360N15T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN360N15T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN360N15T2
MOSFET N-CH 150V 310A SOT227B

MOSFET N-CH 150V 310A SOT227B

Supplier's Site
Sheung Wan, Hong Kong
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Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN360N15T2 1324572-IXFN360N15T2 IXFN360N15T2-ND IXFN360N15T2 IXFN360N15T2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 150 volts
IDSS 310000 milliamps
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