Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFN32N80P

Description
Manufacturer: IXYS Win Source Part Number: 1324576-IXFN32N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 625W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN32 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324576-IXFN32N80P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFN32N80P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IXFN32N80P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN32N80P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 800V 29A SOT-227B - 401-IXFN32N80P - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1324576-IXFN32N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 625W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN32 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324576-IXFN32N80P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324576-IXFN32N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324576-IXFN32N80P
Manufacturer: IXYS Win Source Part Number: 1324576-IXFN32N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 625W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 65 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN32 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324576-IXFN32N80P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 625W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN32
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - IXFN32N80P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN32N80P
Single FETs, MOSFETs IXFN32N80P
MOSFET N-CH 800V 29A SOT-227B

MOSFET N-CH 800V 29A SOT-227B

Supplier's Site
Single FETs, MOSFETs - IXFN32N80P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN32N80P-ND
Single FETs, MOSFETs IXFN32N80P-ND
N-Channel 800V 29A (Tc) 625W (Tc) Chassis Mount SOT-227B

N-Channel 800V 29A (Tc) 625W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN32N80P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN32N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN32N80P
MOSFET N-CH 800V 29A SOT-227B

MOSFET N-CH 800V 29A SOT-227B

Supplier's Site
MOSFET N-CH 800V 29A SOT-227B - 401-IXFN32N80P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 29A SOT-227B
401-IXFN32N80P
MOSFET N-CH 800V 29A SOT-227B 401-IXFN32N80P
MOSFET N-CH 800V 29A SOT-227B

MOSFET N-CH 800V 29A SOT-227B

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFN32N80P
MOSFET IXFN32N80P
MOSFET 29 Amps 800V 0.27 Rds

MOSFET 29 Amps 800V 0.27 Rds

Buy Now

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324576-IXFN32N80P IXFN32N80P IXFN32N80P-ND IXFN32N80P 401-IXFN32N80P IXFN32N80P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 800V 29A SOT-227B MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 625000 milliwatts 625000 milliwatts 625000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Packing Method Tube; Tube Tube; Tube Tube; Tube
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