Zilog Single FETs, MOSFETs IXFN32N120P

Description
N-Channel 1200V 32A (Tc) 1000W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet
Description
N-Channel 1200V 32A (Tc) 1000W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFN32N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN32N120P-ND
Single FETs, MOSFETs IXFN32N120P-ND
N-Channel 1200V 32A (Tc) 1000W (Tc) Chassis Mount SOT-227B

N-Channel 1200V 32A (Tc) 1000W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN32N120P - 777622-IXFN32N120P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN32N120P
777622-IXFN32N120P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN32N120P 777622-IXFN32N120P
Manufacturer: IXYS Win Source Part Number: 777622-IXFN32N120P Series: Polar Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 32A Family Name: IXFN32N120P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: SOT-227B Channel Type Type: N Drain Source Voltage: 1200V Vgs(th) (Maximum) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 21000pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1000W (Tc) Rds On (Maximum) @ Id, Vgs: 310 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): APT34M120J; APT12040JVFR ; APT12040JVR; Introduction Date: March 09, 2010 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777622-IXFN32N120P
Series: Polar
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 32A
Family Name: IXFN32N120P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: SOT-227B
Channel Type Type: N
Drain Source Voltage: 1200V
Vgs(th) (Maximum) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 360nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 21000pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1000W (Tc)
Rds On (Maximum) @ Id, Vgs: 310 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): APT34M120J; APT12040JVFR ; APT12040JVR;
Introduction Date: March 09, 2010
ECCN: EAR99
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFN32N120P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN32N120P
Single FETs, MOSFETs IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B

MOSFET N-CH 1200V 32A SOT-227B

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN32N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN32N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B

MOSFET N-CH 1200V 32A SOT-227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 32 Amps 1200V

MOSFET 32 Amps 1200V

Buy Now

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN32N120P-ND 777622-IXFN32N120P IXFN32N120P IXFN32N120P IXFN32N120P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN32N120P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type SOT-227-4, miniBLOC SOT3 SOT-227-4, miniBLOC SOT-227-4, miniBLOC
PD 1.00E6 milliwatts 1.00E6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N3904RLRAH - 854965-2N3904RLRAH - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Single IGBTs - 448-AIGB40N65F5ATMA1TR-ND - DigiKey
Infineon Technologies AG
Specs
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tape Reel
Structure NPT
View Details
4 suppliers