Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFN280N07

Description
Manufacturer: IXYS Win Source Part Number: 1323876-IXFN280N07 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 70 V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 600W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 83 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Description
Manufacturer: IXYS Win Source Part Number: 1323876-IXFN280N07 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 70 V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 600W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 83 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): 1 (Unlimited)
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323876-IXFN280N07 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323876-IXFN280N07
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323876-IXFN280N07
Manufacturer: IXYS Win Source Part Number: 1323876-IXFN280N07 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 70 V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 600W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 83 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Moisture Sensitivity Level (MSL): 1 (Unlimited)

Manufacturer: IXYS
Win Source Part Number: 1323876-IXFN280N07
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 70 V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 600W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 83
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Buy Now Datasheet
Single FETs, MOSFETs - IXFN280N07-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN280N07-ND
Single FETs, MOSFETs IXFN280N07-ND
N-Channel 70V 280A (Tc) 600W (Tc) Chassis Mount SOT-227B

N-Channel 70V 280A (Tc) 600W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN280N07 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN280N07
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN280N07
MOSFET N-CH 70V 280A SOT-227B

MOSFET N-CH 70V 280A SOT-227B

Supplier's Site
Single FETs, MOSFETs - IXFN280N07 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN280N07
Single FETs, MOSFETs IXFN280N07
MOSFET N-CH 70V 280A SOT-227B

MOSFET N-CH 70V 280A SOT-227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 280 Amps 70V 0.006 Rds

MOSFET 280 Amps 70V 0.006 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1323876-IXFN280N07 IXFN280N07-ND IXFN280N07 IXFN280N07 IXFN280N07
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 600000 milliwatts 600000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
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