Zilog Single FETs, MOSFETs IXFN26N100P

Description
N-Channel 1000V 23A (Tc) 595W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet
Description
N-Channel 1000V 23A (Tc) 595W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXFN26N100P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN26N100P-ND
Single FETs, MOSFETs IXFN26N100P-ND
N-Channel 1000V 23A (Tc) 595W (Tc) Chassis Mount SOT-227B

N-Channel 1000V 23A (Tc) 595W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324616-IXFN26N100P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324616-IXFN26N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324616-IXFN26N100P
Manufacturer: IXYS Win Source Part Number: 1324616-IXFN26N100P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 595W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 83 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN26 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324616-IXFN26N100P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 595W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN26
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN26N100P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN26N100P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN26N100P
MOSFET N-CH 1000V 23A SOT-227B

MOSFET N-CH 1000V 23A SOT-227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 26 Amps 1000V 0.39 Rds

MOSFET 26 Amps 1000V 0.39 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN26N100P-ND 1324616-IXFN26N100P IXFN26N100P IXFN26N100P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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