Manufacturer: IXYS
Win Source Part Number: 1323879-IXFN21N100Q
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 520W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 67
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN21
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 1000V 21A SOT-227B
MOSFET N-CH 1000V 21A SOT-227B
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1323879-IXFN21N100Q | IXFN21N100Q | IXFN21N100Q | IXFN21N100Q |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| PD | 520000 milliwatts | 520000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
