MOSFET N-CH 200V 188A SOT-227B
N-Channel 200V 188A (Tc) 1070W (Tc) Chassis Mount SOT-227B
Manufacturer: IXYS
Win Source Part Number: 1191112-IXFN210N20P
Series: HiPerFET
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 188A
Family Name: IXFN210N20P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: SOT-227B
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 255nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 18600pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1070W (Tc)
Rds On (Maximum) @ Id, Vgs: 10.5 mOhm @ 105A, 10V
Alternative Parts (Cross-Reference): SML20J175; APT20M11JVFR; APT20M11JLL;
Introduction Date: May 26, 2010
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 188A SOT-227B
MOSFET N-CH 200V 188A SOT-227B
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFN210N20P | IXFN210N20P-ND | 1191112-IXFN210N20P | 401-IXFN210N20P | IXFN210N20P | IXFN210N20P |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN210N20P | MOSFET N-CH 200V 188A SOT-227B | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 200 volts | 200 volts | ||||
| IDSS | 188000 milliamps | |||||
| PD | 1.07E6 milliwatts | 1.07E6 milliwatts |