Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN210N20P IXFN210N20P

Description
Manufacturer: IXYS Win Source Part Number: 1191112-IXFN210N20P Series: HiPerFET Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 188A Family Name: IXFN210N20P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: SOT-227B Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 18600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1070W (Tc) Rds On (Maximum) @ Id, Vgs: 10.5 mOhm @ 105A, 10V Alternative Parts (Cross-Reference): SML20J175; APT20M11JVFR; APT20M11JLL; Introduction Date: May 26, 2010 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN210N20P - 1191112-IXFN210N20P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFN210N20P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IXFN210N20P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN210N20P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 200V 188A SOT-227B - 401-IXFN210N20P - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1191112-IXFN210N20P Series: HiPerFET Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 188A Family Name: IXFN210N20P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: SOT-227B Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 18600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1070W (Tc) Rds On (Maximum) @ Id, Vgs: 10.5 mOhm @ 105A, 10V Alternative Parts (Cross-Reference): SML20J175; APT20M11JVFR; APT20M11JLL; Introduction Date: May 26, 2010 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN210N20P - 1191112-IXFN210N20P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN210N20P
1191112-IXFN210N20P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN210N20P 1191112-IXFN210N20P
Manufacturer: IXYS Win Source Part Number: 1191112-IXFN210N20P Series: HiPerFET Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: SOT-227-4, miniBLOC Mounting: Chassis Mount Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 188A Family Name: IXFN210N20P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: SOT-227B Channel Type Type: N Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 255nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 18600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1070W (Tc) Rds On (Maximum) @ Id, Vgs: 10.5 mOhm @ 105A, 10V Alternative Parts (Cross-Reference): SML20J175; APT20M11JVFR; APT20M11JLL; Introduction Date: May 26, 2010 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191112-IXFN210N20P
Series: HiPerFET
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 188A
Family Name: IXFN210N20P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: SOT-227B
Channel Type Type: N
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 255nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 18600pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1070W (Tc)
Rds On (Maximum) @ Id, Vgs: 10.5 mOhm @ 105A, 10V
Alternative Parts (Cross-Reference): SML20J175; APT20M11JVFR; APT20M11JLL;
Introduction Date: May 26, 2010
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFN210N20P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN210N20P
Single FETs, MOSFETs IXFN210N20P
MOSFET N-CH 200V 188A SOT-227B

MOSFET N-CH 200V 188A SOT-227B

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFN210N20P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN210N20P-ND
Single FETs, MOSFETs IXFN210N20P-ND
N-Channel 200V 188A (Tc) 1070W (Tc) Chassis Mount SOT-227B

N-Channel 200V 188A (Tc) 1070W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN210N20P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN210N20P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN210N20P
MOSFET N-CH 200V 188A SOT-227B

MOSFET N-CH 200V 188A SOT-227B

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFN210N20P
MOSFET IXFN210N20P
MOSFET 188 Amps 200V 0.0105 Rds

MOSFET 188 Amps 200V 0.0105 Rds

Buy Now
MOSFET N-CH 200V 188A SOT-227B - 401-IXFN210N20P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 188A SOT-227B
401-IXFN210N20P
MOSFET N-CH 200V 188A SOT-227B 401-IXFN210N20P
MOSFET N-CH 200V 188A SOT-227B

MOSFET N-CH 200V 188A SOT-227B

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191112-IXFN210N20P IXFN210N20P IXFN210N20P-ND IXFN210N20P IXFN210N20P 401-IXFN210N20P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFN210N20P Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 200V 188A SOT-227B
Package Type SOT3 SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 200 volts 200 volts
IDSS 188000 milliamps
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