Zilog Single FETs, MOSFETs IXFN20N120P

Description
N-Channel 1200V 20A (Tc) 595W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet
Description
N-Channel 1200V 20A (Tc) 595W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXFN20N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN20N120P-ND
Single FETs, MOSFETs IXFN20N120P-ND
N-Channel 1200V 20A (Tc) 595W (Tc) Chassis Mount SOT-227B

N-Channel 1200V 20A (Tc) 595W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324591-IXFN20N120P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324591-IXFN20N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324591-IXFN20N120P
Manufacturer: IXYS Win Source Part Number: 1324591-IXFN20N120P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Power Dissipation (Max): 595W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 76 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN20 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324591-IXFN20N120P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 595W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN20
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN20N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN20N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN20N120P
MOSFET N-CH 1200V 20A SOT-227B

MOSFET N-CH 1200V 20A SOT-227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20 Amps 1200V 0.6 Rds

MOSFET 20 Amps 1200V 0.6 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN20N120P-ND 1324591-IXFN20N120P IXFN20N120P IXFN20N120P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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