N-Channel 100V 200A (Tc) 680W (Tc) Chassis Mount SOT-227B
Win Source Part Number: 1028156-IXFN200N10P
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Polar
Package: Box
Standard Package: 10
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 680W (Tc)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): VS-FA72SA50LC; VS-FA40SA50LCIXFN 200N10P;
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFN200
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 100V 200A SOT-227B
MOSFET N-CH 100V 200A SOT-227B
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 238-IXFN200N10P-ND | 1028156-IXFN200N10P | IXFN200N10P | IXFN200N10P | IXFN200N10P |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | SOT-227-4, miniBLOC | SOT3 | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | |
| PD | 680000 milliwatts | 680000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |