Littelfuse, Inc. Single FETs, MOSFETs IXFN200N10P

Description
N-Channel 100V 200A (Tc) 680W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet
Description
N-Channel 100V 200A (Tc) 680W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXFN200N10P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFN200N10P-ND
Single FETs, MOSFETs 238-IXFN200N10P-ND
N-Channel 100V 200A (Tc) 680W (Tc) Chassis Mount SOT-227B

N-Channel 100V 200A (Tc) 680W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1028156-IXFN200N10P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1028156-IXFN200N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1028156-IXFN200N10P
Win Source Part Number: 1028156-IXFN200N10P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar Package: Box Standard Package: 10 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 680W (Tc) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Alternative Parts (Cross-Reference): VS-FA72SA50LC; VS-FA40SA50LCIXFN 200N10P; ECCN: EAR99 Fake Threat In the Open Market: 54 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFN200 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1028156-IXFN200N10P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Polar
Package: Box
Standard Package: 10
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 680W (Tc)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): VS-FA72SA50LC; VS-FA40SA50LCIXFN 200N10P;
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFN200
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IXFN200N10P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN200N10P
Single FETs, MOSFETs IXFN200N10P
MOSFET N-CH 100V 200A SOT-227B

MOSFET N-CH 100V 200A SOT-227B

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN200N10P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN200N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN200N10P
MOSFET N-CH 100V 200A SOT-227B

MOSFET N-CH 100V 200A SOT-227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200 Amps 100V 0.0075 Rds

MOSFET 200 Amps 100V 0.0075 Rds

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXFN200N10P-ND 1028156-IXFN200N10P IXFN200N10P IXFN200N10P IXFN200N10P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type SOT-227-4, miniBLOC SOT3 SOT-227-4, miniBLOC SOT-227-4, miniBLOC
PD 680000 milliwatts 680000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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