Littelfuse, Inc. Single FETs, MOSFETs IXFN180N20

Description
MOSFET N-CH 200V 180A SOT-227B
Request a Quote Datasheet
Description
MOSFET N-CH 200V 180A SOT-227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFN180N20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN180N20
Single FETs, MOSFETs IXFN180N20
MOSFET N-CH 200V 180A SOT-227B

MOSFET N-CH 200V 180A SOT-227B

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFN180N20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN180N20-ND
Single FETs, MOSFETs IXFN180N20-ND
N-Channel 200V 180A (Tc) 700W (Tc) Chassis Mount SOT-227B

N-Channel 200V 180A (Tc) 700W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323976-IXFN180N20 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323976-IXFN180N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323976-IXFN180N20
Manufacturer: IXYS Win Source Part Number: 1323976-IXFN180N20 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 700W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 660 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 79 MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IXFN180N20-NDR Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1323976-IXFN180N20
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 700W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 660 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IXFN180N20-NDR
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 200V 180A

MOSFET 200V 180A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN180N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN180N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN180N20
MOSFET N-CH 200V 180A SOT-227B

MOSFET N-CH 200V 180A SOT-227B

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFN180N20 IXFN180N20-ND 1323976-IXFN180N20 IXFN180N20 IXFN180N20
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts
IDSS 180000 milliamps
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