Littelfuse, Inc. Single FETs, MOSFETs IXFN180N10

Description
MOSFET N-CH 100V 180A SOT-227B
Request a Quote Datasheet
Description
MOSFET N-CH 100V 180A SOT-227B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFN180N10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFN180N10
Single FETs, MOSFETs IXFN180N10
MOSFET N-CH 100V 180A SOT-227B

MOSFET N-CH 100V 180A SOT-227B

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1224611-IXFN180N10 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1224611-IXFN180N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1224611-IXFN180N10
Win Source Part Number: 1224611-IXFN180N10 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™ Package: Tube Standard Package: 10 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Power Dissipation (Max): 600W (Tc) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: 479462 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1224611-IXFN180N10
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™
Package: Tube
Standard Package: 10
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 600W (Tc)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: 479462
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
100V 180A MOSFET Transistor
278-IXFN180N10
100V 180A MOSFET Transistor 278-IXFN180N10
MOSFET N-CH 100V 180A SOT-227B Product overview: IXFN180N10 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN180N10 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 180A SOT-227B Product overview: IXFN180N10 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFN180N10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN180N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN180N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN180N10
MOSFET N-CH 100V 180A SOT-227B

MOSFET N-CH 100V 180A SOT-227B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 180 Amps 100V 0.008 Rds

MOSFET 180 Amps 100V 0.008 Rds

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Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFN180N10 1224611-IXFN180N10 278-IXFN180N10 IXFN180N10 IXFN180N10
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 100V 180A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts
IDSS 180000 milliamps
PD 600000 milliwatts 600000 milliwatts 600 milliwatts
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