Zilog Single FETs, MOSFETs IXFN160N30T

Description
N-Channel 300V 130A (Tc) 900W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet
Description
N-Channel 300V 130A (Tc) 900W (Tc) Chassis Mount SOT-227B
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IXFN160N30T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFN160N30T-ND
Single FETs, MOSFETs IXFN160N30T-ND
N-Channel 300V 130A (Tc) 900W (Tc) Chassis Mount SOT-227B

N-Channel 300V 130A (Tc) 900W (Tc) Chassis Mount SOT-227B

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324593-IXFN160N30T - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324593-IXFN160N30T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324593-IXFN160N30T
Manufacturer: IXYS Win Source Part Number: 1324593-IXFN160N30T Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Power Dissipation (Max): 900W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 70 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN160 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324593-IXFN160N30T
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 900W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN160
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

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Sheung Wan, Hong Kong
MOSFET TRENCH HIPERFET PWR MOSFET 300V 130A

MOSFET TRENCH HIPERFET PWR MOSFET 300V 130A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN160N30T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN160N30T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN160N30T
MOSFET N-CH 300V 130A SOT227B

MOSFET N-CH 300V 130A SOT227B

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFN160N30T-ND 1324593-IXFN160N30T IXFN160N30T IXFN160N30T
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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