Littelfuse, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFN102N30P

Description
Manufacturer: IXYS Win Source Part Number: 1323891-IXFN102N30P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Box Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 600W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 82 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN102 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1323891-IXFN102N30P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Box Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 600W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 82 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN102 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1323891-IXFN102N30P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1323891-IXFN102N30P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1323891-IXFN102N30P
Manufacturer: IXYS Win Source Part Number: 1323891-IXFN102N30P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Box Standard Package: 10 Mounting: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 600W (Tc) Supplier Device Package: SOT-227B Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: SOT-227-4, miniBLOC ECCN: EAR99 Fake Threat In the Open Market: 82 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXFN102 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1323891-IXFN102N30P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Box
Standard Package: 10
Mounting: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SOT-227-4, miniBLOC
ECCN: EAR99
Fake Threat In the Open Market: 82
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFN102
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXFN102N30P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFN102N30P-ND
Single FETs, MOSFETs 238-IXFN102N30P-ND
N-Channel 300V 88A (Tc) 600W (Tc) Chassis Mount SOT-227B

N-Channel 300V 88A (Tc) 600W (Tc) Chassis Mount SOT-227B

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 102 Amps 300V 0.033 Rds

MOSFET 102 Amps 300V 0.033 Rds

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFN102N30P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFN102N30P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFN102N30P
MOSFET N-CH 300V 88A SOT227B

MOSFET N-CH 300V 88A SOT227B

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1323891-IXFN102N30P 238-IXFN102N30P-ND IXFN102N30P IXFN102N30P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB828 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
FET, MOSFET Arrays - AUIRF7103Q-ND - DigiKey
Infineon Technologies AG
Specs
Package Type "8-SOIC (0.154"", 3.90mm Width)"
View Details
2 suppliers
DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor - QPD1035L - Qorvo
Specs
Transistor Technology / Material DC-6 GHz, 40 Watt, 50 Volt GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type Flanged
View Details
2 suppliers