Zilog Single FETs, MOSFETs IXFK36N60P

Description
N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-264AA (IXFK)
Request a Quote Datasheet
Description
N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-264AA (IXFK)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFK36N60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFK36N60P-ND
Single FETs, MOSFETs IXFK36N60P-ND
N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-264AA (IXFK)

N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-264AA (IXFK)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK36N60P - 144011-IXFK36N60P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK36N60P
144011-IXFK36N60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK36N60P 144011-IXFK36N60P
Manufacturer: IXYS Win Source Part Number: 144011-IXFK36N60P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 650W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264AA (IXFK) Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 102nC @ 10V Max Input Capacitance: 5800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 190 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 144011-IXFK36N60P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 650W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264AA (IXFK)
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 102nC @ 10V
Max Input Capacitance: 5800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK36N60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK36N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK36N60P
MOSFET N-CH 600V 36A TO264AA

MOSFET N-CH 600V 36A TO264AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V 36A

MOSFET 600V 36A

Buy Now

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFK36N60P-ND 144011-IXFK36N60P IXFK36N60P IXFK36N60P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK36N60P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-264-3, TO-264AA SOT3; TO-264AA (IXFK) TO-264-3, TO-264AA
V(BR)DSS 600 volts
Unlock Full Specs
to access all available technical data