Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK34N80 IXFK34N80

Description
Manufacturer: IXYS Win Source Part Number: 1049476-IXFK34N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264AA (IXFK) Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 8mA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 7500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 240 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Consumer Electronics, Communications & Networking, Power Management
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Description
Manufacturer: IXYS Win Source Part Number: 1049476-IXFK34N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264AA (IXFK) Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 8mA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 7500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 240 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Consumer Electronics, Communications & Networking, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK34N80 - 1049476-IXFK34N80 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK34N80
1049476-IXFK34N80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK34N80 1049476-IXFK34N80
Manufacturer: IXYS Win Source Part Number: 1049476-IXFK34N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264AA (IXFK) Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 8mA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 7500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 240 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Application Field: Used in Consumer Electronics, Communications & Networking, Power Management

Manufacturer: IXYS
Win Source Part Number: 1049476-IXFK34N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 560W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264AA (IXFK)
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 5V @ 8mA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 7500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Application Field: Used in Consumer Electronics, Communications & Networking, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFK34N80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFK34N80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFK34N80
MOSFET N-CH 800V 34A TO-264AA

MOSFET N-CH 800V 34A TO-264AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 800V 34A

MOSFET 800V 34A

Buy Now Datasheet
MOSFET N-CH 800V 34A TO-264AA - 401-IXFK34N80 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 34A TO-264AA
401-IXFK34N80
MOSFET N-CH 800V 34A TO-264AA 401-IXFK34N80
MOSFET N-CH 800V 34A TO-264AA

MOSFET N-CH 800V 34A TO-264AA

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049476-IXFK34N80 IXFK34N80 IXFK34N80 401-IXFK34N80
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFK34N80 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 800V 34A TO-264AA
Polarity N-Channel; N-Channel
V(BR)DSS 800 volts 800 volts
PD 560000 milliwatts 560000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; TO-264AA (IXFK) TO-264-3, TO-264AA
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