Manufacturer: IXYS
Win Source Part Number: 1323877-IXFH9N80
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 180W (Tc)
Supplier Device Package: TO-247AD (IXFH)
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: Q3837074,Q4932885
Base Product Number: IXFH9
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
N-Channel 800V 9A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 800V 9A TO247AD
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 9A I(D), 800V, 0.9OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 1323877-IXFH9N80 | IXFH9N80-ND | IXFH9N80 | IXFH9N80 | 74195655 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel | N-Channel |
