Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q IXFH88N20Q

Description
Manufacturer: IXYS Win Source Part Number: 1049459-IXFH88N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 88A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 146nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 44A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049459-IXFH88N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 88A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 146nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 44A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q - 1049459-IXFH88N20Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q
1049459-IXFH88N20Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q 1049459-IXFH88N20Q
Manufacturer: IXYS Win Source Part Number: 1049459-IXFH88N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 88A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 146nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 44A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049459-IXFH88N20Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 88A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 146nC @ 10V
Max Input Capacitance: 4150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 30 mOhm @ 44A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFET N-CH 200V 88A TO-247 - 401-IXFH88N20Q - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 88A TO-247
401-IXFH88N20Q
MOSFET N-CH 200V 88A TO-247 401-IXFH88N20Q
MOSFET N-CH 200V 88A TO-247

MOSFET N-CH 200V 88A TO-247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 88 Amps 200V 0.03 Rds

MOSFET 88 Amps 200V 0.03 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH88N20Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH88N20Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH88N20Q
MOSFET N-CH 200V 88A TO247AD

MOSFET N-CH 200V 88A TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049459-IXFH88N20Q 401-IXFH88N20Q IXFH88N20Q IXFH88N20Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q MOSFET N-CH 200V 88A TO-247 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 500000 milliwatts 500000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
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