Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q IXFH88N20Q

Description
Manufacturer: IXYS Win Source Part Number: 1049459-IXFH88N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 88A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 146nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 44A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q - 1049459-IXFH88N20Q - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH88N20Q - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 200V 88A TO-247 - 401-IXFH88N20Q - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049459-IXFH88N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 88A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 146nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 44A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q - 1049459-IXFH88N20Q - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q
1049459-IXFH88N20Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q 1049459-IXFH88N20Q
Manufacturer: IXYS Win Source Part Number: 1049459-IXFH88N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 88A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 146nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 30 mOhm @ 44A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049459-IXFH88N20Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 88A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 146nC @ 10V
Max Input Capacitance: 4150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 30 mOhm @ 44A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH88N20Q - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH88N20Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH88N20Q
MOSFET N-CH 200V 88A TO247AD

MOSFET N-CH 200V 88A TO247AD

Supplier's Site
MOSFET N-CH 200V 88A TO-247 - 401-IXFH88N20Q - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 88A TO-247
401-IXFH88N20Q
MOSFET N-CH 200V 88A TO-247 401-IXFH88N20Q
MOSFET N-CH 200V 88A TO-247

MOSFET N-CH 200V 88A TO-247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFH88N20Q
MOSFET IXFH88N20Q
MOSFET 88 Amps 200V 0.03 Rds

MOSFET 88 Amps 200V 0.03 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049459-IXFH88N20Q IXFH88N20Q 401-IXFH88N20Q IXFH88N20Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH88N20Q Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 200V 88A TO-247 MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 500000 milliwatts 500000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
Unlock Full Specs
to access all available technical data