Zilog Single FETs, MOSFETs IXFH6N90

Description
N-Channel 900V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet
Description
N-Channel 900V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH6N90-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH6N90-ND
Single FETs, MOSFETs IXFH6N90-ND
N-Channel 900V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 900V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1180714-IXFH6N90 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1180714-IXFH6N90
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1180714-IXFH6N90
Win Source Part Number: 1180714-IXFH6N90 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 2.5mA Power Dissipation (Max): 300W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (IXFH) Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 50 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: IXFH6N90-NDR Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1180714-IXFH6N90
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 300W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: IXFH6N90-NDR
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH6N90 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH6N90
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH6N90
MOSFET N-CH 900V 6A TO247AD

MOSFET N-CH 900V 6A TO247AD

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFH6N90-ND 1180714-IXFH6N90 IXFH6N90
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data