N-Channel 900V 6A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Win Source Part Number: 1180714-IXFH6N90
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 300W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXFH)
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: IXFH6N90-NDR
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 900V 6A TO247AD
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFH6N90-ND | 1180714-IXFH6N90 | IXFH6N90 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |