Manufacturer: IXYS
Win Source Part Number: 205680-IXFH6N120P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 92nC @ 10V
Max Input Capacitance: 2830pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 1200V 6A TO247AD
MOSFET N-CH 1200V 6A TO247AD
MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 205680-IXFH6N120P | IXFH6N120P-ND | IXFH6N120P | IXFH6N120P | IXFH6N120P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH6N120P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 1200 volts | 1200 volts | |||
| PD | 250000 milliwatts | 250000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
