Zilog Single FETs, MOSFETs IXFH6N120P

Description
N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet
Description
N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH6N120P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH6N120P-ND
Single FETs, MOSFETs IXFH6N120P-ND
N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH6N120P - 205680-IXFH6N120P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH6N120P
205680-IXFH6N120P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH6N120P 205680-IXFH6N120P
Manufacturer: IXYS Win Source Part Number: 205680-IXFH6N120P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 92nC @ 10V Max Input Capacitance: 2830pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205680-IXFH6N120P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 92nC @ 10V
Max Input Capacitance: 2830pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH6N120P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH6N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH6N120P
MOSFET N-CH 1200V 6A TO247AD

MOSFET N-CH 1200V 6A TO247AD

Supplier's Site
Single FETs, MOSFETs - IXFH6N120P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH6N120P
Single FETs, MOSFETs IXFH6N120P
MOSFET N-CH 1200V 6A TO247AD

MOSFET N-CH 1200V 6A TO247AD

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH6N120P-ND 205680-IXFH6N120P IXFH6N120P IXFH6N120P IXFH6N120P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH6N120P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3 TO-247; TO-247-3
V(BR)DSS 1200 volts 1200 volts
PD 250000 milliwatts 250000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-05 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Package Type Die
Power Gain 18 dB
View Details
4 suppliers
GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF7309QTR - 1020724-AUIRF7309QTR - Win Source Electronics
Specs
Polarity P-Channel
V(BR)DSS 30 volts
PD 1400 milliwatts
View Details
6 suppliers