Manufacturer: IXYS
Win Source Part Number: 777614-IXFH6N100
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Family Name: IXFH6N100
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 4.5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2600pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 180W (Tc)
Rds On (Maximum) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): IRFPG50; SiHFPG50-E3; SiHFPG50; IRFPG50PBF;
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 30
MOSFET N-CH 1000V 6A TO247AD Product overview: IXFH6N100 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH6N100 can be used for catalog matching and distributor lookup.
MOSFET N-CH 1000V 6A TO247AD
TRANSISTOR, MOSFET, N-CHANNEL, 1000 V, 6 AMP, TO-247. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 1KV 6A TO-247AD
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 777614-IXFH6N100 | 278-IXFH6N100 | IXFH6N100 | 38654225 | IXFH6N100 | 401-IXFH6N100 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH6N100 | 1000V 6A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET | MOSFET N-CH 1KV 6A TO-247AD |
| PD | 180000 milliwatts | 180 milliwatts | 180000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; SOT3 | Tube | TO-247; TO-247-3 | |||
| Packing Method | Tube; Tube | Tube | Tube; Tube | Tube; Tube | ||
| Polarity | N-Channel |