Manufacturer: IXYS
Win Source Part Number: 1049445-IXFH67N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 67A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 4500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient
N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 100V 67A TO-247AD
MOSFET N-CH 100V 67A TO-247AD
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049445-IXFH67N10 | IXFH67N10-ND | IXFH67N10 | 401-IXFH67N10 | IXFH67N10 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH67N10 | Single FETs, MOSFETs | MOSFET | MOSFET N-CH 100V 67A TO-247AD | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | |||
| PD | 300000 milliwatts | 300000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; SOT3; TO-247AD (IXFH) | TO-247; TO-247-3 | TO-247; TO-247-3 |
