Zilog Single FETs, MOSFETs IXFH67N10

Description
N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet
Description
N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH67N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH67N10-ND
Single FETs, MOSFETs IXFH67N10-ND
N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH67N10 - 1049445-IXFH67N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH67N10
1049445-IXFH67N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH67N10 1049445-IXFH67N10
Manufacturer: IXYS Win Source Part Number: 1049445-IXFH67N10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 67A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 260nC @ 10V Max Input Capacitance: 4500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049445-IXFH67N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 67A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 260nC @ 10V
Max Input Capacitance: 4500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 33.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFET N-CH 100V 67A TO-247AD - 401-IXFH67N10 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 67A TO-247AD
401-IXFH67N10
MOSFET N-CH 100V 67A TO-247AD 401-IXFH67N10
MOSFET N-CH 100V 67A TO-247AD

MOSFET N-CH 100V 67A TO-247AD

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH67N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH67N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH67N10
MOSFET N-CH 100V 67A TO-247AD

MOSFET N-CH 100V 67A TO-247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 67 Amps 100V

MOSFET 67 Amps 100V

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH67N10-ND 1049445-IXFH67N10 401-IXFH67N10 IXFH67N10 IXFH67N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH67N10 MOSFET N-CH 100V 67A TO-247AD Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
V(BR)DSS 100 volts 100 volts
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data