Littelfuse, Inc. Single FETs, MOSFETs IXFH60N65X2

Description
N-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247 (IXTH)
  • Single FETs, MOSFETs - 238-IXFH60N65X2-ND - DigiKey
    DigiKey
  • FETs - Single - IXFH60N65X2 - 1191069-IXFH60N65X2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFH60N65X2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH60N65X2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 650V 60A TO-247 - 401-IXFH60N65X2 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
N-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXFH60N65X2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH60N65X2-ND
Single FETs, MOSFETs 238-IXFH60N65X2-ND
N-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247 (IXTH)

N-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
FETs - Single - IXFH60N65X2 - 1191069-IXFH60N65X2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFH60N65X2
1191069-IXFH60N65X2
FETs - Single - IXFH60N65X2 1191069-IXFH60N65X2
Manufacturer: IXYS Win Source Part Number: 1191069-IXFH60N65X2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 780W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 650V Id - Continuous Drain Current: 60A Rds On (Maximum) at Id, Vgs: 52mOhm at 30A, 10V Gate Source Voltage(th) (Maximum) at Id: 5.5V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 107nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 6180pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191069-IXFH60N65X2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 780W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 60A
Rds On (Maximum) at Id, Vgs: 52mOhm at 30A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 107nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 6180pF at 25V

Buy Now Datasheet
Single FETs, MOSFETs - IXFH60N65X2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH60N65X2
Single FETs, MOSFETs IXFH60N65X2
MOSFET N-CH 650V 60A TO247

MOSFET N-CH 650V 60A TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH60N65X2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH60N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH60N65X2
MOSFET N-CH 650V 60A TO247

MOSFET N-CH 650V 60A TO247

Supplier's Site
MOSFET N-CH 650V 60A TO-247 - 401-IXFH60N65X2 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 650V 60A TO-247
401-IXFH60N65X2
MOSFET N-CH 650V 60A TO-247 401-IXFH60N65X2
MOSFET N-CH 650V 60A TO-247

MOSFET N-CH 650V 60A TO-247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFH60N65X2
MOSFET IXFH60N65X2
MOSFET MOSFET 650V/60A Ultra Junction X2

MOSFET MOSFET 650V/60A Ultra Junction X2

Buy Now

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXFH60N65X2-ND 1191069-IXFH60N65X2 IXFH60N65X2 IXFH60N65X2 401-IXFH60N65X2 IXFH60N65X2
Product Name Single FETs, MOSFETs FETs - Single - IXFH60N65X2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 650V 60A TO-247 MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3
V(BR)DSS 650 volts 650 volts
PD 780000 milliwatts 780000 milliwatts 780000 milliwatts
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