MOSFET N-CH 650V 60A TO247
Manufacturer: IXYS
Win Source Part Number: 1191069-IXFH60N65X2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 780W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 60A
Rds On (Maximum) at Id, Vgs: 52mOhm at 30A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 107nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 6180pF at 25V
N-Channel 650V 60A (Tc) 780W (Tc) Through Hole TO-247 (IXTH)
MOSFET N-CH 650V 60A TO-247
MOSFET MOSFET 650V/60A Ultra Junction X2
MOSFET N-CH 650V 60A TO247
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFH60N65X2 | 1191069-IXFH60N65X2 | 238-IXFH60N65X2-ND | 401-IXFH60N65X2 | IXFH60N65X2 | IXFH60N65X2 |
| Product Name | Single FETs, MOSFETs | FETs - Single - IXFH60N65X2 | Single FETs, MOSFETs | MOSFET N-CH 650V 60A TO-247 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | 650 volts | ||||
| IDSS | 60000 milliamps |
