Manufacturer: IXYS
Win Source Part Number: 1049442-IXFH60N50P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1040W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 96nC @ 10V
Max Input Capacitance: 6250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 100 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
N-Channel 500V 60A (Tc) 1040W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 500V 60A TO247AD
MOSFET N-CH 500V 60A TO247AD
MOSFET TRANSISTOR, N CHANNEL, 60 A, 500 V, 0.1 OHM, 10 V, 5 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049442-IXFH60N50P3 | 238-IXFH60N50P3-ND | IXFH60N50P3 | IXFH60N50P3 | 55113112 | IXFH60N50P3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH60N50P3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 500 volts | 500 volts | ||||
| PD | 1.04E6 milliwatts | 1.04E6 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
