Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH58N20Q IXFH58N20Q

Description
Manufacturer: IXYS Win Source Part Number: 1049439-IXFH58N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 40 mOhm @ 29A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH58N20Q - 1049439-IXFH58N20Q - Win Source Electronics
    Win Source Electronics
  • MOSFET N-CH 200V 58A TO-247AD - 401-IXFH58N20Q - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH58N20Q - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049439-IXFH58N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 40 mOhm @ 29A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH58N20Q - 1049439-IXFH58N20Q - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH58N20Q
1049439-IXFH58N20Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH58N20Q 1049439-IXFH58N20Q
Manufacturer: IXYS Win Source Part Number: 1049439-IXFH58N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 40 mOhm @ 29A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Industrial

Manufacturer: IXYS
Win Source Part Number: 1049439-IXFH58N20Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 29A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
200V 58A MOSFET Transistor
278-IXFH58N20Q
200V 58A MOSFET Transistor 278-IXFH58N20Q
MOSFET N-CH 200V 58A TO247AD Product overview: IXFH58N20Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH58N20Q can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 58A TO247AD Product overview: IXFH58N20Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH58N20Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 200V 58A TO-247AD - 401-IXFH58N20Q - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 58A TO-247AD
401-IXFH58N20Q
MOSFET N-CH 200V 58A TO-247AD 401-IXFH58N20Q
MOSFET N-CH 200V 58A TO-247AD

MOSFET N-CH 200V 58A TO-247AD

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH58N20Q - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH58N20Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH58N20Q
MOSFET N-CH 200V 58A TO247AD

MOSFET N-CH 200V 58A TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049439-IXFH58N20Q 278-IXFH58N20Q 401-IXFH58N20Q IXFH58N20Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH58N20Q 200V 58A MOSFET Transistor MOSFET N-CH 200V 58A TO-247AD Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 300000 milliwatts 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXFH) Tube -55degC ~ 150degC (TJ)
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