N-Channel 200V 58A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 200V 58A TO247AD Product overview: IXFH58N20 from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH58N20 can be used for catalog matching and distributor lookup.
Manufacturer: IXYS
Win Source Part Number: 018138-IXFH58N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 29A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 30
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 58A, 200V, 0.04OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 200V 58A TO247AD
MOSFET N-CH 200V 58A TO247AD
MOSFET N-CH 200V 58A TO-247AD
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH58N20-ND | 278-IXFH58N20 | 018138-IXFH58N20 | 38654221 | IXFH58N20 | IXFH58N20 | IXFH58N20 | 401-IXFH58N20 |
| Product Name | Single FETs, MOSFETs | 200V 58A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH58N20 | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | MOSFET N-CH 200V 58A TO-247AD |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-247; TO-247-3 | Tube | TO-247; SOT3; TO-247AD (IXFH) | TO-247; TO-247-3 | TO-247; TO-247-3 | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| Transconductance | 0.0320 kS | |||||||
| PD | 300 milliwatts | 300000 milliwatts | 300000 milliwatts | 300000 milliwatts |
