Manufacturer: IXYS
Win Source Part Number: 1049437-IXFH52N30Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 52A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 5300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 300V 52A TO247AD
MOSFET N-CH 300V 52A TO247AD
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049437-IXFH52N30Q | IXFH52N30Q-ND | IXFH52N30Q | IXFH52N30Q | IXFH52N30Q |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30Q | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 300 volts | 300 volts | |||
| PD | 360000 milliwatts | 360000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
