Littelfuse, Inc. Single FETs, MOSFETs IXFH52N30Q

Description
N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet
Description
N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH52N30Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH52N30Q-ND
Single FETs, MOSFETs IXFH52N30Q-ND
N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30Q - 1049437-IXFH52N30Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30Q
1049437-IXFH52N30Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30Q 1049437-IXFH52N30Q
Manufacturer: IXYS Win Source Part Number: 1049437-IXFH52N30Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 5300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049437-IXFH52N30Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 52A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 5300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH52N30Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH52N30Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH52N30Q
MOSFET N-CH 300V 52A TO247AD

MOSFET N-CH 300V 52A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 300V 52A

MOSFET 300V 52A

Buy Now
Single FETs, MOSFETs - IXFH52N30Q - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH52N30Q
Single FETs, MOSFETs IXFH52N30Q
MOSFET N-CH 300V 52A TO247AD

MOSFET N-CH 300V 52A TO247AD

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH52N30Q-ND 1049437-IXFH52N30Q IXFH52N30Q IXFH52N30Q IXFH52N30Q
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30Q Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3 TO-247; TO-247-3
V(BR)DSS 300 volts 300 volts
PD 360000 milliwatts 360000 milliwatts
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