Littelfuse, Inc. Single FETs, MOSFETs IXFH52N30P

Description
MOSFET N-CH 300V 52A TO247AD
Request a Quote Datasheet
Description
MOSFET N-CH 300V 52A TO247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH52N30P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH52N30P
Single FETs, MOSFETs IXFH52N30P
MOSFET N-CH 300V 52A TO247AD

MOSFET N-CH 300V 52A TO247AD

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30P - 1049436-IXFH52N30P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30P
1049436-IXFH52N30P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30P 1049436-IXFH52N30P
Manufacturer: IXYS Win Source Part Number: 1049436-IXFH52N30P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049436-IXFH52N30P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 52A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 66 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXFH52N30P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH52N30P-ND
Single FETs, MOSFETs 238-IXFH52N30P-ND
N-Channel 300V 52A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 300V 52A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH52N30P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH52N30P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH52N30P
MOSFET N-CH 300V 52A TO247AD

MOSFET N-CH 300V 52A TO247AD

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number IXFH52N30P 1049436-IXFH52N30P 238-IXFH52N30P-ND IXFH52N30P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH52N30P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 300 volts 300 volts
IDSS 52000 milliamps
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