Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 IXFH50N20

Description
Manufacturer: IXYS Win Source Part Number: 1049434-IXFH50N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Description
Manufacturer: IXYS Win Source Part Number: 1049434-IXFH50N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 - 1049434-IXFH50N20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20
1049434-IXFH50N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 1049434-IXFH50N20
Manufacturer: IXYS Win Source Part Number: 1049434-IXFH50N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049434-IXFH50N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET DIODE Id50 BVdass200

MOSFET DIODE Id50 BVdass200

Buy Now Datasheet
Transistor - 24166562 - Radwell International
Willingboro, NJ, United States
Transistor
24166562
Transistor 24166562
POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 200V, 0.045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 200V, 0.045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH50N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH50N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH50N20
MOSFET N-CH 200V 50A TO247AD

MOSFET N-CH 200V 50A TO247AD

Supplier's Site
MOSFET N-CH 200V 50A TO-247AD - 401-IXFH50N20 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 50A TO-247AD
401-IXFH50N20
MOSFET N-CH 200V 50A TO-247AD 401-IXFH50N20
MOSFET N-CH 200V 50A TO-247AD

MOSFET N-CH 200V 50A TO-247AD

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049434-IXFH50N20 IXFH50N20 24166562 IXFH50N20 401-IXFH50N20
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 200V 50A TO-247AD
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
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