Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 IXFH50N20

Description
Manufacturer: IXYS Win Source Part Number: 1049434-IXFH50N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Description
Manufacturer: IXYS Win Source Part Number: 1049434-IXFH50N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 - 1049434-IXFH50N20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20
1049434-IXFH50N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 1049434-IXFH50N20
Manufacturer: IXYS Win Source Part Number: 1049434-IXFH50N20 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049434-IXFH50N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
Transistor - 24166562 - Radwell International
Willingboro, NJ, United States
Transistor
24166562
Transistor 24166562
POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 200V, 0.045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 200V, 0.045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFET N-CH 200V 50A TO-247AD - 401-IXFH50N20 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 50A TO-247AD
401-IXFH50N20
MOSFET N-CH 200V 50A TO-247AD 401-IXFH50N20
MOSFET N-CH 200V 50A TO-247AD

MOSFET N-CH 200V 50A TO-247AD

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH50N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH50N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH50N20
MOSFET N-CH 200V 50A TO247AD

MOSFET N-CH 200V 50A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DIODE Id50 BVdass200

MOSFET DIODE Id50 BVdass200

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Radwell International Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049434-IXFH50N20 24166562 401-IXFH50N20 IXFH50N20 IXFH50N20
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 Transistor MOSFET N-CH 200V 50A TO-247AD Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3
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