Manufacturer: IXYS
Win Source Part Number: 1049434-IXFH50N20
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30
MOSFET N-CH 200V 50A TO-247AD
MOSFET N-CH 200V 50A TO247AD
POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 200V, 0.045OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049434-IXFH50N20 | 401-IXFH50N20 | IXFH50N20 | IXFH50N20 | 24166562 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH50N20 | MOSFET N-CH 200V 50A TO-247AD | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor |
| Polarity | N-Channel; N-Channel | ||||
| V(BR)DSS | 200 volts | 200 volts | |||
| PD | 300000 milliwatts | 300000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; SOT3; TO-247AD (IXFH) | TO-247; TO-247-3 |
