Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXFH48N60X3

Description
Win Source Part Number: 1355079-IXFH48N60X3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 32 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: HiPerFET™, Ultra X3 Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: TO-247 Base Product Number: IXFH48 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V Power Dissipation (Max): 520W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
Request a Quote Datasheet
Description
Win Source Part Number: 1355079-IXFH48N60X3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 32 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: HiPerFET™, Ultra X3 Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: TO-247 Base Product Number: IXFH48 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V Power Dissipation (Max): 520W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1355079-IXFH48N60X3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1355079-IXFH48N60X3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1355079-IXFH48N60X3
Win Source Part Number: 1355079-IXFH48N60X3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 32 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: HiPerFET™, Ultra X3 Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: TO-247 Base Product Number: IXFH48 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V Power Dissipation (Max): 520W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1355079-IXFH48N60X3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 32 pct.
MSL Level: 1 (Unlimited)
Mfr: IXYS
Series: HiPerFET™, Ultra X3
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Product Number: IXFH48
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Power Dissipation (Max): 520W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXFH48N60X3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH48N60X3-ND
Single FETs, MOSFETs 238-IXFH48N60X3-ND
N-Channel 600V 48A (Tc) 520W (Tc) Through Hole TO-247

N-Channel 600V 48A (Tc) 520W (Tc) Through Hole TO-247

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH48N60X3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH48N60X3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH48N60X3
MOSFET ULTRA JCT 600V 48A TO247

MOSFET ULTRA JCT 600V 48A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1355079-IXFH48N60X3 238-IXFH48N60X3-ND IXFH48N60X3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data