Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P IXFH44N50P

Description
Manufacturer: IXYS Win Source Part Number: 1049433-IXFH44N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 658W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 44A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 5440pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1049433-IXFH44N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 658W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 44A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 5440pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P - 1049433-IXFH44N50P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P
1049433-IXFH44N50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P 1049433-IXFH44N50P
Manufacturer: IXYS Win Source Part Number: 1049433-IXFH44N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 658W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 44A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 5440pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1049433-IXFH44N50P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 658W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 44A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 5440pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 140 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFH44N50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH44N50P
Single FETs, MOSFETs IXFH44N50P
MOSFET N-CH 500V 44A TO247AD

MOSFET N-CH 500V 44A TO247AD

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXFH44N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH44N50P-ND
Single FETs, MOSFETs 238-IXFH44N50P-ND
N-Channel 500V 44A (Tc) 658W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 500V 44A (Tc) 658W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Transistor - 128087168 - Radwell International
Willingboro, NJ, United States
Transistor
128087168
Transistor 128087168
POWER FIELD-EFFECT TRANSISTOR, 44A I(D), 500V, 0.14OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 44A I(D), 500V, 0.14OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH44N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH44N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH44N50P
MOSFET N-CH 500V 44A TO247AD

MOSFET N-CH 500V 44A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 44A

MOSFET 500V 44A

Buy Now

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049433-IXFH44N50P IXFH44N50P 238-IXFH44N50P-ND 128087168 IXFH44N50P IXFH44N50P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P Single FETs, MOSFETs Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 658000 milliwatts 658000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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