Littelfuse, Inc. Single FETs, MOSFETs IXFH44N50P

Description
MOSFET N-CH 500V 44A TO247AD
Request a Quote Datasheet
Description
MOSFET N-CH 500V 44A TO247AD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFH44N50P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH44N50P
Single FETs, MOSFETs IXFH44N50P
MOSFET N-CH 500V 44A TO247AD

MOSFET N-CH 500V 44A TO247AD

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P - 1049433-IXFH44N50P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P
1049433-IXFH44N50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P 1049433-IXFH44N50P
Manufacturer: IXYS Win Source Part Number: 1049433-IXFH44N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 658W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 44A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 98nC @ 10V Max Input Capacitance: 5440pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 140 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1049433-IXFH44N50P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 658W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 44A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 5440pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 140 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXFH44N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH44N50P-ND
Single FETs, MOSFETs 238-IXFH44N50P-ND
N-Channel 500V 44A (Tc) 658W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 500V 44A (Tc) 658W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 500V 44A

MOSFET 500V 44A

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH44N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH44N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH44N50P
MOSFET N-CH 500V 44A TO247AD

MOSFET N-CH 500V 44A TO247AD

Supplier's Site
Transistor - 128087168 - Radwell International
Willingboro, NJ, United States
Transistor
128087168
Transistor 128087168
POWER FIELD-EFFECT TRANSISTOR, 44A I(D), 500V, 0.14OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 44A I(D), 500V, 0.14OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number IXFH44N50P 1049433-IXFH44N50P 238-IXFH44N50P-ND IXFH44N50P IXFH44N50P 128087168
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH44N50P Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 44000 milliamps
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