Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH40N30 IXFH40N30

Description
Manufacturer: IXYS Win Source Part Number: 1049427-IXFH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient Quantity per package: 30
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH40N30 - 1049427-IXFH40N30 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFH40N30-ND - DigiKey
    DigiKey
  • Transistor - 36284969 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH40N30 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049427-IXFH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH40N30 - 1049427-IXFH40N30 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH40N30
1049427-IXFH40N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH40N30 1049427-IXFH40N30
Manufacturer: IXYS Win Source Part Number: 1049427-IXFH40N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049427-IXFH40N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 4800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - IXFH40N30-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH40N30-ND
Single FETs, MOSFETs IXFH40N30-ND
N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFH40N30
MOSFET IXFH40N30
MOSFET 300V 40A

MOSFET 300V 40A

Buy Now Datasheet
Transistor - 36284969 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
36284969
Transistor 36284969
TRANSISTOR, MOSFET, N CHANNEL, 300V, 40A, TO-247AD, N CHANNEL, 0.085OHM, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET, N CHANNEL, 300V, 40A, TO-247AD, N CHANNEL, 0.085OHM, THROUGH HOLE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH40N30 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH40N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH40N30
MOSFET N-CH 300V 40A TO247AD

MOSFET N-CH 300V 40A TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1049427-IXFH40N30 IXFH40N30-ND IXFH40N30 36284969 IXFH40N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH40N30 Single FETs, MOSFETs MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts
PD 300000 milliwatts
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