N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 600V 36A TO247AD
Manufacturer: IXYS
Win Source Part Number: 1049425-IXFH36N60P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 650W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 102nC @ 10V
Max Input Capacitance: 5800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 190 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 600V 36A TO247AD
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFH36N60P-ND | IXFH36N60P | 1049425-IXFH36N60P | IXFH36N60P | IXFH36N60P |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH36N60P | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; SOT3; TO-247AD (IXFH) | TO-247; TO-247-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 600 volts | 600 volts |
