Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH35N30 IXFH35N30

Description
Manufacturer: IXYS Win Source Part Number: 1049421-IXFH35N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Description
Manufacturer: IXYS Win Source Part Number: 1049421-IXFH35N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH35N30 - 1049421-IXFH35N30 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH35N30
1049421-IXFH35N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH35N30 1049421-IXFH35N30
Manufacturer: IXYS Win Source Part Number: 1049421-IXFH35N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 4800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049421-IXFH35N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 4800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 300V 35A

MOSFET 300V 35A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH35N30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH35N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH35N30
MOSFET N-CH 300V 35A TO247AD

MOSFET N-CH 300V 35A TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049421-IXFH35N30 IXFH35N30 IXFH35N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH35N30 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 300 volts
PD 300000 milliwatts
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