Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH28N60P3 IXFH28N60P3

Description
Manufacturer: IXYS Win Source Part Number: 1049411-IXFH28N60P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 695W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 3560pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 260 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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Description
Manufacturer: IXYS Win Source Part Number: 1049411-IXFH28N60P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 695W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 3560pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 260 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH28N60P3 - 1049411-IXFH28N60P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH28N60P3
1049411-IXFH28N60P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH28N60P3 1049411-IXFH28N60P3
Manufacturer: IXYS Win Source Part Number: 1049411-IXFH28N60P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 695W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 3560pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 260 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049411-IXFH28N60P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 695W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 5V @ 2.5mA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 3560pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 260 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IXFH28N60P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH28N60P3-ND
Single FETs, MOSFETs IXFH28N60P3-ND
N-Channel 600V 28A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 600V 28A (Tc) 695W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Single FETs, MOSFETs - IXFH28N60P3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH28N60P3
Single FETs, MOSFETs IXFH28N60P3
MOSFET N-CH 600V 28A TO247AD

MOSFET N-CH 600V 28A TO247AD

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH28N60P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH28N60P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH28N60P3
MOSFET N-CH 600V 28A TO247AD

MOSFET N-CH 600V 28A TO247AD

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET

MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET

Buy Now

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049411-IXFH28N60P3 IXFH28N60P3-ND IXFH28N60P3 IXFH28N60P3 IXFH28N60P3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH28N60P3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 695000 milliwatts 695000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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