Manufacturer: IXYS
Win Source Part Number: 1049409-IXFH26N60Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 600V 26A TO247AD Product overview: IXFH26N60Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH26N60Q can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 26A TO247AD
DISCONTINUED BY MANUFACTURER, MOSFET, N CHANNEL, 600V, 26A. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 600V 26A TO247AD
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 1049409-IXFH26N60Q | 278-IXFH26N60Q | IXFH26N60Q | 38654198 | IXFH26N60Q |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N60Q | 600V 26A MOSFET Transistor | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||
| PD | 360000 milliwatts | 360000 milliwatts | 360000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
