Littelfuse, Inc. 600V 26A MOSFET Transistor IXFH26N60Q

Description
MOSFET N-CH 600V 26A TO247AD Product overview: IXFH26N60Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH26N60Q can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 600V 26A TO247AD Product overview: IXFH26N60Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH26N60Q can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
600V 26A MOSFET Transistor
278-IXFH26N60Q
600V 26A MOSFET Transistor 278-IXFH26N60Q
MOSFET N-CH 600V 26A TO247AD Product overview: IXFH26N60Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH26N60Q can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 26A TO247AD Product overview: IXFH26N60Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH26N60Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N60Q - 1049409-IXFH26N60Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N60Q
1049409-IXFH26N60Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N60Q 1049409-IXFH26N60Q
Manufacturer: IXYS Win Source Part Number: 1049409-IXFH26N60Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049409-IXFH26N60Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXFH26N60Q - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH26N60Q
Single FETs, MOSFETs IXFH26N60Q
MOSFET N-CH 600V 26A TO247AD

MOSFET N-CH 600V 26A TO247AD

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH26N60Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH26N60Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH26N60Q
MOSFET N-CH 600V 26A TO247AD

MOSFET N-CH 600V 26A TO247AD

Supplier's Site
Transistor - 38654198 - Radwell International
Willingboro, NJ, United States
Transistor
38654198
Transistor 38654198
DISCONTINUED BY MANUFACTURER, MOSFET, N CHANNEL, 600V, 26A. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, MOSFET, N CHANNEL, 600V, 26A. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 278-IXFH26N60Q 1049409-IXFH26N60Q IXFH26N60Q IXFH26N60Q 38654198
Product Name 600V 26A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N60Q Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
PD 360000 milliwatts 360000 milliwatts 360000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tube TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3 TO-247; TO-247-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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