Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50Q IXFH26N50Q

Description
Manufacturer: IXYS Win Source Part Number: 1049404-IXFH26N50Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50Q - 1049404-IXFH26N50Q - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH26N50Q - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1049404-IXFH26N50Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50Q - 1049404-IXFH26N50Q - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50Q
1049404-IXFH26N50Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50Q 1049404-IXFH26N50Q
Manufacturer: IXYS Win Source Part Number: 1049404-IXFH26N50Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 200 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1049404-IXFH26N50Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 200 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH26N50Q - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH26N50Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH26N50Q
MOSFET N-CH 500V 26A TO247AD

MOSFET N-CH 500V 26A TO247AD

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049404-IXFH26N50Q IXFH26N50Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N50Q Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 300000 milliwatts
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