Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH24N80P IXFH24N80P

Description
Manufacturer: IXYS Win Source Part Number: 1049402-IXFH24N80P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 650W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 7200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Quantity per package: 30
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH24N80P - 1049402-IXFH24N80P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFH24N80P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 238-IXFH24N80P-ND - DigiKey
    DigiKey
  • Transistor - 38654193 - Radwell International
    Radwell International
  • In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P - 401-IXFH24N80P - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH24N80P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049402-IXFH24N80P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 650W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 7200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH24N80P - 1049402-IXFH24N80P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH24N80P
1049402-IXFH24N80P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH24N80P 1049402-IXFH24N80P
Manufacturer: IXYS Win Source Part Number: 1049402-IXFH24N80P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 650W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 105nC @ 10V Max Input Capacitance: 7200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049402-IXFH24N80P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 650W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 7200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - IXFH24N80P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFH24N80P
Single FETs, MOSFETs IXFH24N80P
MOSFET N-CH 800V 24A TO247AD

MOSFET N-CH 800V 24A TO247AD

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXFH24N80P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFH24N80P-ND
Single FETs, MOSFETs 238-IXFH24N80P-ND
N-Channel 800V 24A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 800V 24A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Transistor - 38654193 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38654193
Transistor 38654193
POWER FIELD-EFFECT TRANSISTOR, 24A I(D), 800V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 24A I(D), 800V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P - 401-IXFH24N80P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P
401-IXFH24N80P
In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P 401-IXFH24N80P
In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P

In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH24N80P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH24N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH24N80P
MOSFET N-CH 800V 24A TO247AD

MOSFET N-CH 800V 24A TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Radwell International Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049402-IXFH24N80P IXFH24N80P 238-IXFH24N80P-ND 38654193 401-IXFH24N80P IXFH24N80P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH24N80P Single FETs, MOSFETs Single FETs, MOSFETs Transistor In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 800 volts 800 volts 800 volts
PD 650000 milliwatts 650000 milliwatts 650000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3 TO-247; TO-247-3 Through Hole
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