MOSFET N-CH 800V 24A TO247AD
N-Channel 800V 24A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)
POWER FIELD-EFFECT TRANSISTOR, 24A I(D), 800V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: IXYS
Win Source Part Number: 1049402-IXFH24N80P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 650W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 105nC @ 10V
Max Input Capacitance: 7200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30
In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P
MOSFET N-CH 800V 24A TO247AD
| ODG (Origin Data Global) | DigiKey | Radwell International | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFH24N80P | 238-IXFH24N80P-ND | 38654193 | 1049402-IXFH24N80P | 401-IXFH24N80P | IXFH24N80P |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH24N80P | In a Tube of 30, N-Channel MOSFET, 24 A, 800 V, 3-Pin TO-247AD IXYS IXFH24N80P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 800 volts | 800 volts | 800 volts | |||
| IDSS | 24000 milliamps | |||||
| PD | 650000 milliwatts | 650000 milliwatts | 650000 milliwatts |
