Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH23N80Q IXFH23N80Q

Description
Manufacturer: IXYS Win Source Part Number: 1049399-IXFH23N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 4.5V @ 3mA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4900pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 420 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH23N80Q - 1049399-IXFH23N80Q - Win Source Electronics
    Win Source Electronics
  • MOSFET N-CH 800V 23A TO-247 - 401-IXFH23N80Q - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH23N80Q - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049399-IXFH23N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 4.5V @ 3mA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4900pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 420 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH23N80Q - 1049399-IXFH23N80Q - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH23N80Q
1049399-IXFH23N80Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH23N80Q 1049399-IXFH23N80Q
Manufacturer: IXYS Win Source Part Number: 1049399-IXFH23N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 4.5V @ 3mA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4900pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 420 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049399-IXFH23N80Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 3mA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 4900pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 420 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
800V 23A MOSFET Transistor
278-IXFH23N80Q
800V 23A MOSFET Transistor 278-IXFH23N80Q
MOSFET N-CH 800V 23A TO247AD Product overview: IXFH23N80Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH23N80Q can be used for catalog matching and distributor lookup.

MOSFET N-CH 800V 23A TO247AD Product overview: IXFH23N80Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH23N80Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 800V 23A TO-247 - 401-IXFH23N80Q - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 23A TO-247
401-IXFH23N80Q
MOSFET N-CH 800V 23A TO-247 401-IXFH23N80Q
MOSFET N-CH 800V 23A TO-247

MOSFET N-CH 800V 23A TO-247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH23N80Q - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH23N80Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH23N80Q
MOSFET N-CH 800V 23A TO247AD

MOSFET N-CH 800V 23A TO247AD

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFH23N80Q
MOSFET IXFH23N80Q
MOSFET 23 Amps 800V 0.40 Rds

MOSFET 23 Amps 800V 0.40 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049399-IXFH23N80Q 278-IXFH23N80Q 401-IXFH23N80Q IXFH23N80Q IXFH23N80Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH23N80Q 800V 23A MOSFET Transistor MOSFET N-CH 800V 23A TO-247 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 500000 milliwatts 500 milliwatts 500000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXFH) Tube TO-247; TO-247-3
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