N-Channel 600V 22A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH)
Manufacturer: IXYS
Win Source Part Number: 1049395-IXFH22N60P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5V @ 1.5mA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 2600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 360 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 600V 22A TO247AD
MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET
MOSFET, N-CH, 600V, 22A, 150DEG C, 500W, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:600V, CONTINUOUS DRAIN CURRENT ID:22A, ON RESISTANCE RDS(ON):0.39OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFH22N60P3-ND | 1049395-IXFH22N60P3 | IXFH22N60P3 | IXFH22N60P3 | 106332737 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH22N60P3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247AD (IXFH) | TO-247; TO-247-3 | ||
| V(BR)DSS | 600 volts |
