Manufacturer: IXYS
Win Source Part Number: 130590-IXFH21N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 4mA
Max Gate Charge: 77nC @ 10V
Max Input Capacitance: 2600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 10.5A, 10V
Alternative Parts (Cross-Reference): IRFP460PBF; IXFH21N50F; IXFH21N50FSN;
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
MOSFET N-CH 500V 21A TO247AD
MOSFET N-CH 500V 21A TO247AD
| Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 130590-IXFH21N50 | IXFH21N50 | IXFH21N50 | IXFH21N50 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH21N50 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 500 volts | 500 volts | ||
| PD | 300000 milliwatts | 300000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
