Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N80Q IXFH20N80Q

Description
Manufacturer: IXYS Win Source Part Number: 1049392-IXFH20N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 420 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049392-IXFH20N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 420 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N80Q - 1049392-IXFH20N80Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N80Q
1049392-IXFH20N80Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N80Q 1049392-IXFH20N80Q
Manufacturer: IXYS Win Source Part Number: 1049392-IXFH20N80Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 4mA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 420 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049392-IXFH20N80Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 4mA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 5100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 420 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXFH20N80Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH20N80Q-ND
Single FETs, MOSFETs IXFH20N80Q-ND
N-Channel 800V 20A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 800V 20A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH20N80Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH20N80Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH20N80Q
MOSFET N-CH 800V 20A TO247AD

MOSFET N-CH 800V 20A TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1049392-IXFH20N80Q IXFH20N80Q-ND IXFH20N80Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH20N80Q Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts
PD 360000 milliwatts
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